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semiconductor device fabrication | A Wisdom Archive on semiconductor device fabrication |  | semiconductor device fabrication A selection of articles related to semiconductor device fabrication |  |
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| ARTICLES RELATED TO semiconductor device fabrication |  |  |  | semiconductor device fabrication: Encyclopedia - HaloalkaneThe haloalkanes (also known as Halogenoalkanes) are a group of chemical compounds, consisting of alkanes, such as methane or ethane, with one or more halogens linked, such as chlorine or fluorine, making them a type of organic halide. They are known under many chemical and trivial names. As fire extinguishers, propellants, and solvents, they have or had wide use. Some haloalkanes have negative effects on the environment, such as ozone depletion.
Haloalkane - General.
A haloalkane, also known as al ...
Including:
Read more here: » Haloalkane: Encyclopedia - Haloalkane |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Ion implantation - Other issues in ion implantation
Ion implantation - Crystallographic damage.
Each individual ion produces many point defects in the target crystal on impact such as vacancies and interstitials. Vacancies are crystal lattice points unoccupied by an atom: in this case the ion collides with a target atom, resulting in transfer of a significant amount of energy to the target atom such that it leaves its crystal site. This target atom then itself becomes a projectile in the solid, and can cause successive collision events. Interstitials result when s ...
See also:Ion implantation, Ion implantation - Application in semiconductor device fabrication, Ion implantation - Doping, Ion implantation - Silicon on insulator, Ion implantation - Mesotaxy, Ion implantation - Application in metal finishing, Ion implantation - Tool steel toughening, Ion implantation - Surface finishing, Ion implantation - Other issues in ion implantation, Ion implantation - Crystallographic damage, Ion implantation - Damage recovery, Ion implantation - Amorphization, Ion implantation - Sputtering, Ion implantation - Ion channelling, Ion implantation - Hazardous materials note, Ion implantation - High Voltage safety, Ion implantation - Manufacturers of Ion Implantation Equipment Read more here: » Ion implantation: Encyclopedia II - Ion implantation - Other issues in ion implantation |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Integrated circuit - Manufacture
Integrated circuit - Fabrication.
Main article: Semiconductor fabrication.
The semiconductors of the periodic table of the chemical elements were identified as the most likely materials for a solid state vacuum tube by researchers like William Shockley at Bell Laboratories starting in the 1930s. Starting with copper oxide, proceeding to germanium, then silicon, the materials were systematically studied in the 1940s and 1950s. Today, silicon monocrystals are the main substrate used for inte ...
See also:Integrated circuit, Integrated circuit - Introduction, Integrated circuit - Advances in integrated circuits, Integrated circuit - Popularity of ICs, Integrated circuit - Classification and complexity, Integrated circuit - Manufacture, Integrated circuit - Fabrication, Integrated circuit - Packaging, Integrated circuit - History origins and generations, Integrated circuit - The birth of the IC, Integrated circuit - SSI MSI LSI, Integrated circuit - VLSI, Integrated circuit - ULSI WSI SOC, Integrated circuit - Other developments, Integrated circuit - Key industrial and academic data, Integrated circuit - Notable ICs, Integrated circuit - Manufacturers, Integrated circuit - VLSI conferences, Integrated circuit - VLSI journals Read more here: » Integrated circuit: Encyclopedia II - Integrated circuit - Manufacture |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Electromigration - Practical implications of electromigrationElectromigration decreases the reliability of ICs. In the worst case it leads to the loss of one or more connections and causes the failure of the entire circuit. Since the reliability of interconnects is not only of great interest in the field of space travel and for military purposes but also with civilian applications like for example the anti-lock braking system of cars, high technological and economic values are attached to this effect.
Using the Black equation the life span of interconnects in integrated circuits tested under "s ...
See also:Electromigration, Electromigration - History, Electromigration - Practical implications of electromigration, Electromigration - Fundamentals, Electromigration - Forces on ions in an electrical field, Electromigration - Failure mechanisms, Electromigration - Diffusion mechanisms, Electromigration - Thermal effects, Electromigration - Literature, Electromigration - Reference standards Read more here: » Electromigration: Encyclopedia II - Electromigration - Practical implications of electromigration |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Chemical vapor deposition - Silicon or silicon germanium epitaxyCommon use in industry is the growth of additional layers of doped silicon on the polished sides of prime silicon wafers, before they are processed into semiconductor devices. This is typical of the power devices, such as those used in pacemakers, vending machine controllers, automobile computers, etc.
Commonly, this is accomplished by either single or batch wafer processing using CVD in an epitaxial reactor, which heats the wafers, etches the exposed face with hydrogen chloride gas, and then grows the epitaxial layers by flowing a ga ...
See also:Chemical vapor deposition, Chemical vapor deposition - Silicon or silicon germanium epitaxy Read more here: » Chemical vapor deposition: Encyclopedia II - Chemical vapor deposition - Silicon or silicon germanium epitaxy |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Haloalkane - History
Haloalkane - Original development.
Carbon tetrachloride was used in fire extinguishers and glass (anti)-"fire grenades" from the late nineteenth century until around the end of World War II. Experimentation with chloroalkanes for fire suppression on military aircraft began at least as early as the 1920s.
American engineer Thomas Midgley developed Chlorofluorocarbons (CFC) in 1928 as a replacement for ammonia (NH3), chloromethane (CH3Cl), and sulfur dioxide (SO2), toxic but ...
See also:Haloalkane, Haloalkane - General, Haloalkane - Chlorofluoro compounds CFC HCFC HFC, Haloalkane - Bromofluoro compounds halons, Haloalkane - Polymer haloalkanes, Haloalkane - History, Haloalkane - Original development, Haloalkane - Development on alternatives, Haloalkane - Phase out, Haloalkane - Nomenclature, Haloalkane - IUPAC nomenclature, Haloalkane - Alternative nomenclature for refrigerants, Haloalkane - Overview of named compounds, Haloalkane - Synthesis, Haloalkane - From alkanes, Haloalkane - From alkenes, Haloalkane - From alkanol alcohol, Haloalkane - Reactions of haloalkanes, Haloalkane - Substitution reactions, Haloalkane - Elimination reactions, Haloalkane - Applications, Haloalkane - Propellant, Haloalkane - Fire extinguishing, Haloalkane - Environmental issues, Haloalkane - Safety Read more here: » Haloalkane: Encyclopedia II - Haloalkane - History |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Haloalkane - History
Haloalkane - Original development.
Tetrachloromethane was used in fire extinguishers and glass (anti)-"fire grenades" from the late nineteenth century until around the end of World War II. Experimentation with chloroalkanes for fire suppression on military aircraft began at least as early as the 1920s.
American engineer Thomas Midgley developed Chlorofluorocarbons (CFC) in 1928 as a replacement for ammonia (NH3), chloromethane (CH3Cl), and sulfur dioxide (SO2), toxic but in ...
See also:Haloalkane, Haloalkane - General, Haloalkane - Chlorofluoro compounds CFC HCFC HFC, Haloalkane - Bromofluoro compounds halons, Haloalkane - Polymer haloalkanes, Haloalkane - History, Haloalkane - Original development, Haloalkane - Development on alternatives, Haloalkane - Phase out, Haloalkane - Nomenclature, Haloalkane - IUPAC nomenclature, Haloalkane - Alternative nomenclature for refrigerants, Haloalkane - Overview of named compounds, Haloalkane - Synthesis, Haloalkane - From alkanes, Haloalkane - From alkenes, Haloalkane - From alkanol alcohol, Haloalkane - Reactions of haloalkanes, Haloalkane - Substitution reactions, Haloalkane - Elimination reactions, Haloalkane - Applications, Haloalkane - Propellant, Haloalkane - Fire extinguishing, Haloalkane - Environmental issues, Haloalkane - Safety Read more here: » Haloalkane: Encyclopedia II - Haloalkane - History |
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 |  |  | semiconductor device fabrication: Encyclopedia II - MOSFET - MOSFET scalingOver the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometres, but modern integrated circuits are incorporating MOSFETs with channel lengths of less than a tenth of a micrometre. Indeed Intel will begin production of a process featuring a 65nm channel length in early 2006. Until the late 1990s, this size reduction resulted in great improvement to MOSFET operation with no deleterious consequences. Historically, the difficulties with decreasing the size of the MOSFET have been associated with the semiconductor device fabrication process.
MO ...
See also:MOSFET, MOSFET - Circuit symbols, MOSFET - MOSFET operation, MOSFET - The primacy of MOSFETs, MOSFET - MOSFET scaling, MOSFET - Reasons for MOSFET scaling, MOSFET - Difficulties arising due to MOSFET scaling, MOSFET - MOSFET construction, MOSFET - Gate material, MOSFET - Other MOSFET types, MOSFET - Depletion mode MOSFETs, MOSFET - NMOS logic, MOSFET - Power MOSFET, MOSFET - DMOS, MOSFET - HEXFET, MOSFET - CoolMOS Read more here: » MOSFET: Encyclopedia II - MOSFET - MOSFET scaling |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Integrated circuit - History, origins and generations
Integrated circuit - The birth of the IC.
The integrated circuit was first conceived by a radar scientist, Geoffrey W.A. Dummer (born 1909), working for the Royal Radar Establishment of the British Ministry of Defence, and published in Washington, D.C. on May 7, 1952. Dummer unsuccessfully attempted to build such a circuit in 1956.
The first integrated circuits were manufactured independently by two scientists: Jack Kilby of Texas Instruments filed a patent for a "Solid Circuit" made of germanium on Februa ...
See also:Integrated circuit, Integrated circuit - Introduction, Integrated circuit - Advances in integrated circuits, Integrated circuit - Popularity of ICs, Integrated circuit - Classification and complexity, Integrated circuit - Manufacture, Integrated circuit - Fabrication, Integrated circuit - Packaging, Integrated circuit - History, origins and generations, Integrated circuit - The birth of the IC, Integrated circuit - SSI, MSI, LSI, Integrated circuit - VLSI, Integrated circuit - ULSI, WSI, SOC, Integrated circuit - Other developments, Integrated circuit - Key industrial and academic data, Integrated circuit - Notable ICs, Integrated circuit - Manufacturers, Integrated circuit - VLSI conferences, Integrated circuit - VLSI journals Read more here: » Integrated circuit: Encyclopedia II - Integrated circuit - History, origins and generations |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Haloalkane - Environmental issuesSince the late 1970s the use of CFCs has been heavily regulated because of its destructive effects on the ozone layer. This damage was discovered by Sherry Rowland and Mario Molina, who first published a paper suggesting the connection in 1974. It turns out that one of CFCs' most attractive features—their unreactivity—has been instrumental in making them one of the most significant pollutants. CFCs' lack of reactivity gives them a lifespan which can exceed 100 years in some cases. This gives them time to diffuse into the upper stratosphe ...
See also:Haloalkane, Haloalkane - General, Haloalkane - Chlorofluoro compounds CFC HCFC HFC, Haloalkane - Bromofluoro compounds halons, Haloalkane - Polymer haloalkanes, Haloalkane - History, Haloalkane - Original development, Haloalkane - Development on alternatives, Haloalkane - Phase out, Haloalkane - Nomenclature, Haloalkane - IUPAC nomenclature, Haloalkane - Alternative nomenclature for refrigerants, Haloalkane - Overview of named compounds, Haloalkane - Synthesis, Haloalkane - From alkanes, Haloalkane - From alkenes, Haloalkane - From alkanol alcohol, Haloalkane - Reactions of haloalkanes, Haloalkane - Substitution reactions, Haloalkane - Elimination reactions, Haloalkane - Applications, Haloalkane - Propellant, Haloalkane - Fire extinguishing, Haloalkane - Environmental issues, Haloalkane - Safety Read more here: » Haloalkane: Encyclopedia II - Haloalkane - Environmental issues |
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 |  |  | semiconductor device fabrication: Encyclopedia II - MOSFET - MOSFET construction
MOSFET - Gate material.
The primary criterion for the gate material is that it is a good conductor. Highly-doped polycrystalline silicon is an acceptable, but certainly not ideal conductor, and it also suffers from some more technical deficiencies in its role as the standard gate material. There are a few reasons why polysilicon is preferable to a metal gate:
The threshold voltage (and consequently the drain to source on-current) is determined by the work function difference between the gate material ...
See also:MOSFET, MOSFET - Circuit symbols, MOSFET - MOSFET operation, MOSFET - The primacy of MOSFETs, MOSFET - MOSFET scaling, MOSFET - Reasons for MOSFET scaling, MOSFET - Difficulties arising due to MOSFET scaling, MOSFET - MOSFET construction, MOSFET - Gate material, MOSFET - Other MOSFET types, MOSFET - Depletion mode MOSFETs, MOSFET - NMOS logic, MOSFET - Power MOSFET, MOSFET - DMOS, MOSFET - HEXFET, MOSFET - CoolMOS Read more here: » MOSFET: Encyclopedia II - MOSFET - MOSFET construction |
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 |  |  | semiconductor device fabrication: Encyclopedia II - MOSFET - Other MOSFET types
MOSFET - Depletion mode MOSFETs.
There are depletion mode MOSFET devices, which are less commonly used than the standard enhancement mode devices already described. These are MOSFET devices which are doped so that a channel exists even without any voltage applied to the gate. In order to control the channel, a negative voltage is applied to the gate, depleting the channel which reduces the current flow through the device. In essence, the depletion mode device is equivalent to a normally closed switch, while the enhancement mode device is equivalent to a normally open switch.[1]
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See also:MOSFET, MOSFET - Circuit symbols, MOSFET - MOSFET operation, MOSFET - The primacy of MOSFETs, MOSFET - MOSFET scaling, MOSFET - Reasons for MOSFET scaling, MOSFET - Difficulties arising due to MOSFET scaling, MOSFET - MOSFET construction, MOSFET - Gate material, MOSFET - Other MOSFET types, MOSFET - Depletion mode MOSFETs, MOSFET - NMOS logic, MOSFET - Power MOSFET, MOSFET - DMOS, MOSFET - HEXFET, MOSFET - CoolMOS Read more here: » MOSFET: Encyclopedia II - MOSFET - Other MOSFET types |
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 |  |  | semiconductor device fabrication: Encyclopedia II - MOSFET - The primacy of MOSFETsIn 1960, Dawon Kahng and Martin Atalla at Bell Labs invented the metal oxide semiconductor field-effect transistor (MOSFET). Theoretically different from Shockley's transistor, the MOSFET was structured by putting an insulating layer on the surface of the semiconductor and then placing a metallic gate electrode on that. It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator. Not only did it possess such technical attractions as low cost of production and ease of integration, the ...
See also:MOSFET, MOSFET - Circuit symbols, MOSFET - MOSFET operation, MOSFET - The primacy of MOSFETs, MOSFET - MOSFET scaling, MOSFET - Reasons for MOSFET scaling, MOSFET - Difficulties arising due to MOSFET scaling, MOSFET - MOSFET construction, MOSFET - Gate material, MOSFET - Other MOSFET types, MOSFET - Depletion mode MOSFETs, MOSFET - NMOS logic, MOSFET - Power MOSFET, MOSFET - DMOS, MOSFET - HEXFET, MOSFET - CoolMOS Read more here: » MOSFET: Encyclopedia II - MOSFET - The primacy of MOSFETs |
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 |  |  | semiconductor device fabrication: Encyclopedia II - MOSFET - MOSFET operationThe operation of a MOSFET can be separated into three different modes, depending on the voltages at the terminals. For an enhancement mode, n-channel MOSFET the modes are:
1. Cut-off or sub-threshold mode: When VGS < Vth where Vth is the threshold voltage of the device.
The transistor is turned off, and there is no conduction between drain and source. While t ...
See also:MOSFET, MOSFET - Circuit symbols, MOSFET - MOSFET operation, MOSFET - The primacy of MOSFETs, MOSFET - MOSFET scaling, MOSFET - Reasons for MOSFET scaling, MOSFET - Difficulties arising due to MOSFET scaling, MOSFET - MOSFET construction, MOSFET - Gate material, MOSFET - Other MOSFET types, MOSFET - Depletion mode MOSFETs, MOSFET - NMOS logic, MOSFET - Power MOSFET, MOSFET - DMOS, MOSFET - HEXFET, MOSFET - CoolMOS Read more here: » MOSFET: Encyclopedia II - MOSFET - MOSFET operation |
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 |  |  | semiconductor device fabrication: Encyclopedia II - Electromigration - Failure mechanisms
Electromigration - Diffusion mechanisms.
Electromigration - Thermal effects.
In an ideal conductor, where atoms are arranged in a perfect lattice structure, the electrons moving through it would experience no collisions and electromigration would not occur. In real conductors, defects in the lattice structure and the random thermal vibration of the atoms about their positions causes electrons to collide with the atoms and scatter, which is the source of electrical resist ...
See also:Electromigration, Electromigration - History, Electromigration - Practical implications of electromigration, Electromigration - Fundamentals, Electromigration - Forces on ions in an electrical field, Electromigration - Failure mechanisms, Electromigration - Diffusion mechanisms, Electromigration - Thermal effects, Electromigration - Literature, Electromigration - Reference standards Read more here: » Electromigration: Encyclopedia II - Electromigration - Failure mechanisms |
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